联系方式：markthu@mail.tsinghua.edu.cn

个人简介（Personal Profile）

Neisser教授目前在清华大学集成电路学院任职，从事光刻和光刻胶技术方面的教学与研究。他在IBM、AZ电子材料和SEMATECH等公司负责研发项目。Neisser教授在光刻技术及其相关材料（包括光刻胶、抗反射涂层和旋涂蚀刻掩模）等方面具有丰富经验。

Neisser教授在康奈尔大学获得化学学士学位，并在密歇根大学继续深造，获得了化学硕士和博士学位。他共获得了30多项专利，并在国际期刊上发表了100多篇论文。此外，他还参与了两本书籍章节的编写。

Neisser教授目前担任国际IRDS路线图光刻委员会的主席。他的研究工作对学术界和光刻技术的进步做出了贡献。

研究领域（Research Interests）

Neisser博士的研究方向主要是探索和开发新型光刻材料，特别是含金属的光刻胶及其反应离子蚀刻技术，以及深入理解光刻胶的工作原理。他对高级光刻技术中涉及的随机性挑战和光刻胶的精确建模保持着浓厚的研究兴趣。Neisser博士的最新研究成果涵盖了新型光刻胶材料、EUV光刻胶建模、IRDS光刻路线图的制定，以及光刻胶添加剂中光降解基质的机制研究。最近发表的代表性论文如下:

• M. Neisser, “Modeling of Tin based MOR resists”, invited paper presented at the 43rd International Symposium on Photopolymer Science and Technology, June 2026, Himeji, Japan.   Manuscript acceped for publication in Journal of Micro/Nanopatterning, Materials, and Metrology (JM3)

• Ruihao Zhou, Ahmad Hassan Siddique, Zewen Liu, et al. "Etch performance and substrate-dependent selectivity of a polytelluoxane-based EUV photoresist", Proc. SPIE 13984, Advanced Etch Technology and Process Integration for Nanopatterning XV, 1398408 (9 Apr 2026); https://doi.org/10.1117/12.3090955

• Yang Hu, Ahmad Hassan Siddique, Xiaolin Wang, Yang Su, Hong Xu, Xiangming He, Mark Neisser, "Investigation of high-selectivity etching in zirconium-based MOR photoresists for nano-fabrication," Proc. SPIE 13991, Ninth International Workshop on Advanced Patterning Solutions (IWAPS 2025), 139910A (3 December 2025); https://doi.org/10.1117/12.3092491

• Ruihao Zhou Muqing Cao, Yizheng Tan, Mark Neisser and Huaping Xu, “Polytelluoxane as the ideal formulation for EUV photoresist” Science Advances, 11, eadx1918 (2025) https://doi:10.1126/sciadv.adx1918

• Mark Neisser, "Algebraic modeling of dose to size and stochastic defect frequencies," Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, 1342408 (22 April 2025); https://doi.org/10.1117/12.3051447

• Ruihao Zhou, Mark Neisser, Huaping Xu, "Lithographic properties of a novel metalloid-based resist," Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, 134280L (22 April 2025); https://doi.org/10.1117/12.3050217

• A. H. Siddique, Z. Liu, Y. Hu, H. Xu, H. Wu and M. Neisser, "Investigating the etch  Performance of Zirconium-Based Photoresist for Direct Silicon Oxide Etching," 2025 Conference of Science and Technology of Integrated Circuits (CSTIC), Shanghai, China, 2025, pp. 1-3, doi: 10.1109/CSTIC64481.2025.11017874.

• Ahmad Hassan Siddique, Zewen Liu, Yang Hu, Di Qu, Shuai Chen, Hong Xu, Huaqiang Wu, Mark Neisser, "Etch properties of zirconium-based photoresist," Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, 1342905 (22 April 2025); https://doi.org/10.1117/12.3050263

• M. Neisser and H. Levinson, “Lithography and Patterning”, IEEE Electron Devices Society Newsletter, July  2024 Vol. 31, No. 3 ISSN: 1074 1879M. Neisser et al., “How lithography and metrology are enabling yield in the next generation of semiconductor patterning,” Computer, vol. 57, no. 1, pp. 51–58, Jan. 2024, doi: 10.1109/MC.2023.3312767

• Mark Neisser, Harry J. Levinson, "Projecting EUV photo-speeds for future logic nodes," Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231N (23 March 2020). https://doi.org/10.1117/12.2551311
  

• M. Neisser et al., “How lithography and metrology are enabling yield in the next generation of semiconductor patterning,” Computer, vol. 57, no. 1, pp. 51–58, Jan. 2024, doi: 10.1109/MC.2023.3312767

• Journal of Photopolymer Science anaind Technology “Theory of Photodecomposable Base in Chemically Amplified Resist”, Journal of Photopolymer Science and Technology Vol. 36, No. 5 (2023) pp. 329-336

• The International Roadmap for Devices and Systems (IRDS), Lithography and Patterning, 2023 Update. 2023. https://irds.ieee.org.

• IEEE. The International Roadmap for Devices and Systems (IRDS), Executive Summary, 2023 Update. 2023. https://irds.ieee.org.